Growth relaxation effects in pulsed laser deposition.
Item
-
Title
-
Growth relaxation effects in pulsed laser deposition.
-
Identifier
-
AAI3063817
-
identifier
-
3063817
-
Creator
-
Chen, Li.
-
Contributor
-
Adviser: F. J. Cadieu
-
Date
-
2002
-
Language
-
English
-
Publisher
-
City University of New York.
-
Subject
-
Physics, Condensed Matter
-
Abstract
-
The aim of this work is to investigate growth relaxation effects in PLD. Pulsed laser deposition (PLD) is an extremely versatile technique for preparing a wide range of thin films and multilayer structures. Due to the splashing, a stainless shadow strip has been used to block the direct transport of particulates to the substrate. Both shadowed and non-shadowed films have been investigated. Films were deposited onto various substrates, such as Al2O 3, Si and glass substrates The deposit in shadow region was particulate free.;For SmCo based films, the highest coercivity of 22.5 kOe was obtained for 248 nm laser wavelength and 11.3 kOe for 193 nm laser wavelength. The magnetic properties are a function of the laser pulse rate. The films show the presence of (111) in lower laser energy, while the higher energy deposition the films show the (110) and (200) structure. At optimized conditions, remnant to saturation ratio can be as high as 0.9, much higher than the expected value 2/pi. It is believed that the fine grains have exchange coupling effect.;It has been shown that it has been possible to make strongly in plane textured magnetic properties with the dual deposition technique of PLD deposition in conjunction with sputtering with different matrix elements such as Al, Ti, Co, Si, Fe and Fe-Co. Highly corrosion resistant SmCo films were synthesized by PLD SmCo5 deposition while simultaneously sputtering Al.;It also has been shown that La0.7Sr0.3MnO 3 polycrystalline films that exhibit the resistance maximum as a function of deposition parameters, Tp was up to 360 K and with stable smooth MR effects up to 320 K. The properties of LSMO are sensitive to the substrate type. The inexpensive polycrystalline alumina substrate is one of the suitable substrate for growing LSMO films.;A stable memory element was constructed by placing a small interacting bias magnet strip parallel to and slightly above the film strip. Two appreciably different voltage states were observed for the zero applied field values following positive versus negative applied magnetic field excursions.
-
Type
-
dissertation
-
Source
-
PQT Legacy CUNY.xlsx
-
degree
-
Ph.D.
