THE CRITICAL CONDITIONS FOR THE GROWTH OF SILICON DIOXIDE ON SILICON.
Item
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Title
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THE CRITICAL CONDITIONS FOR THE GROWTH OF SILICON DIOXIDE ON SILICON.
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Identifier
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AAI8401900
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identifier
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8401900
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Creator
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GHIDINI, GABRIELLA.
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Contributor
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Prof. Frederick W. Smith
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Date
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1983
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Language
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English
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Publisher
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City University of New York.
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Subject
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Physics, Condensed Matter
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Abstract
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The use of thermally grown SiO(,2) as a coating on Si is wide spread in the modern technology of semiconductor devices. The properties and methods of preparation of SiO(,2) have been studied for many years, but for the increasing importance of high quality thin films of oxide (less than 200 (ANGSTROM)), a better understanding of the initial growth of SiO(,2) will be helpful for the improvement of the actual methods of growing thin films.;The subject of this thesis is the study of the critical conditions for the nucleation and growth of SiO(,2) on Si at low oxidant gas (O(,2) gas and H(,2)O vapor) pressures and high temperatures. For O(,2) pressures between 5 x 10('-5) and 5 x 10('-2) Torr and substrate temperatures between 890-1150(DEGREES)C, the critical O(,2) pressure for the nucleation and growth of SiO(,2) was determined as a function of the substrate temperature. The observed critical conditions for growth are consistent with a theoretical model which focuses on the kinetics of SiO(,2) cluster growth and on the thermodynamics of the competing etching reaction leading to the production of SiO.;With H(,2)O vapor between 7 x 10('-5) and 3 x 10('-1) Torr and substrate temperature between 890-1280(DEGREES)C two critical behaviours were observed, indicating both the coverage of the surface by some compound (SiO(,x) + H) not passivating completely the surface and the subsequent growth of SiO(,2).;A study of the SiO(,2) growth features has also been carried out and evidence for epitaxial growth of cubic (beta)-cristobalite on Si(100) is found.;The influence of doping of the Si substrate on the critical conditions for P, B, As heavily-doped samples is also determined. The critical oxygen pressure is only influenced by P atoms, which seem to enhance the nucleation and growth of SiO(,2).
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Type
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dissertation
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Source
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PQT Legacy CUNY.xlsx
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degree
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Ph.D.
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Program
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Physics
