Interface structure in metal/carbon multilayers.
Item
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Title
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Interface structure in metal/carbon multilayers.
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Identifier
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AAI9304645
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identifier
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9304645
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Creator
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Chan, Yuet-Loy.
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Contributor
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Adviser: Pedro A. Montano
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Date
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1992
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Language
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English
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Publisher
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City University of New York.
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Subject
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Physics, Condensed Matter
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Abstract
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A series of ultra thin Metal/Carbon (W/C, Ti/C and Si/C) multilayers was studied by using a diverse number of techniques (RBS, AS, EELS, AREELS, SEELFS, and X-ray Reflectivity at Small Angles). The samples were prepared by conventional techniques. The substrates used for the samples preparation are Si (111), {dollar}\alpha{dollar}-Al{dollar}\sb2{dollar}O{dollar}\sb3{dollar}, and SiO{dollar}\sb2{dollar}. The thickness of the bilayer in each of the multilayers is in the order of Armstrong. Single crystals (TiC, SiC) were also studied for the purpose of supplying the reference points for the identification of the behavior of these metallic multilayers, especially the electronic excitations. Some samples were measured as a function of temperature by using EELS under UHV conditions.;We observed the formation of a carbide at the W/C interface. The structure of the interface was identified using surface electron energy loss fine structure and X-ray diffraction.;We observed that the Ti/C interface is isolated by a thin titanium oxide layer. The electron density of carbon shows a graphitic character. We found that the interface has a graphite like atomic arrangement rather than a carbide like arrangement.;Angular resolved electron energy loss measurements show that a carbidic interface is present at the silicon-carbon interface. The structure of silicon/carbon multilayers has also been studied by using x-ray reflectivity. We found from the analysis of the data that a carbidic interface forms at the silicon-carbon interface for samples heated in vacuum to 873 K.
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Type
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dissertation
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Source
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PQT Legacy CUNY.xlsx
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degree
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Ph.D.
