Picosecond photoluminescence from semiconductors under static and dynamic stress.
Item
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Title
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Picosecond photoluminescence from semiconductors under static and dynamic stress.
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Identifier
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AAI9304689
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identifier
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9304689
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Creator
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Lee, Shun.
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Contributor
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Adviser: R. R. Alfano
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Date
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1992
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Language
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English
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Publisher
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City University of New York.
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Subject
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Physics, Condensed Matter | Physics, Optics
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Abstract
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In this thesis, picosecond laser generated shock waves are used to apply stress to a semiconductor. The effects of dynamic (shock) compression on the semiconductors Gallium Selenide, Cadmium Selenide, and Gallium Arsenide are studied using photoluminescence techniques. The stress dependence of the radiative lifetimes in Gallium Arsenide is also studied with time resolved photoluminescence experiments.;In the shock compression experiments on Gallium Selenide, the spontaneous and stimulated photoluminescence is attributed to an exciton exciton scattering mechanism. The shock compression changes the band gap. The line broadening is related uniquely to the transient nature of shock compression.;The shock profile has been measured in shock compression experiments on Cadmium Selenide. The time evolution of the stress components from a shock wave propagating along the (001) direction in Gallium Arsenide is obtained from the splittings and shifts of the photoluminescence spectra. The first observation of shock compression of a Gallium Arsenide quantum well along its growth direction has been observed.;Static uniaxial compression experiments are performed to study the hole dynamics in Gallium Arsenide. Three major strain effects have been observed in this time and frequency resolved photoluminescence experiment. The lines associated with the two topmost valence subbands shift with stress. The stress dependence of the effective mass causes an enhancement of the absorption coefficient. The photoluminescence has a nonexponential time dependence. The bimolecular recombination coefficient B is independent of stress, while the recombination constant A has the stress dependence of the matrix elements. It is found that the effective lifetime of the v1 holes decreases as a function of stress.
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Type
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dissertation
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Source
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PQT Legacy CUNY.xlsx
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degree
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Ph.D.
