Resonant nuclear reaction analysis of solid state materials.
Item
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Title
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Resonant nuclear reaction analysis of solid state materials.
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Identifier
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AAI9304747
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identifier
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9304747
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Creator
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Yan, Dong.
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Contributor
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Adviser: Peter M. S. Lesser
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Date
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1992
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Language
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English
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Publisher
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City University of New York.
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Subject
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Physics, Nuclear | Physics, Condensed Matter
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Abstract
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We have explored the application of resonant nuclear reaction analysis (RNRA) to the characterization of solid state materials. A wide range of subjects, from semiconductor physics to electro-chemistry, has been included in this study. We have shown that, with a proper choice of resonance and careful normalization, RNRA can be far superior to conventional ion beam analysis using Rutherford backscattering.;The 0.992-MeV resonance in the reaction {dollar}\rm\sp{lcub}27{rcub}Al(p,\gamma)\sp{lcub}28{rcub}Si{dollar} was used to measure the aluminum composition, x, of {dollar}\rm Al\sb{lcub}x{rcub}Ga\sb{lcub}1-x{rcub}As{dollar} samples on GaAs substrates. It was shown that the RNRA determination of x was substantially free of corrections and best represented the true bulk value. The relation between energy gap and composition was established by correlating RNRA results to low temperature photoluminescence measurements. We also observed the transition from direct to indirect band gap at a composition x = 0.37.;The 0.441-MeV resonance in the reaction {dollar}\rm\sp7Li(p,\gamma)\sp8Be{dollar} was used to profile the lithium depth distribution in electro-deposited amorphous MoS{dollar}\sb3{dollar} thin film samples. The absolute amount of lithium detected was in close agreement with electro-chemical calculations based on charging conditions. This measurement provided an independent verification of lithium intercalation in amorphous MoS{dollar}\sb3.{dollar}.;The 3.05-MeV resonance in the reaction {dollar}\rm\sp{16}O(\alpha,\alpha)\sp{16}O{dollar} was used to detect oxygen in TiC and WC superlattices on silicon substrates. Oxygen was found throughout the TiC samples, but only at the surface of WC samples. These observations were in agreement with Auger and electron energy loss measurements. The absence of oxygen at interfaces in WC superlattices suggests that they will be quite stable at high temperatures.;The 0.992-MeV resonance in the reaction {dollar}\rm\sp{lcub}27{rcub}Al(p,\gamma)\sp{lcub}28{rcub}Si{dollar} was used to measure the energy loss and straggling of channeled 1-MeV protons near the (001) channeling direction in silicon. The measured angular dependence of the energy loss agreed very well with earlier results, and the straggling parameter showed an interesting angular-dependent behavior which could largely be attributed to an "averaging" effect of partially channeled ions.
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Type
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dissertation
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Source
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PQT Legacy CUNY.xlsx
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degree
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Ph.D.
