Electron spin polarization and relaxation in gallium arsenide and gallium arsenide/aluminum(x) gallium(1-x) arsenic quantum wells.
Item
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Title
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Electron spin polarization and relaxation in gallium arsenide and gallium arsenide/aluminum(x) gallium(1-x) arsenic quantum wells.
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Identifier
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AAI9417445
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identifier
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9417445
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Creator
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Chao, Hsieh Shin.
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Contributor
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Adviser: Robert R. Alfano
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Date
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1994
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Language
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English
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Publisher
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City University of New York.
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Subject
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Physics, Condensed Matter | Physics, Electricity and Magnetism
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Abstract
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In this thesis, I have investigated the spin relaxation mechanism and the operating momentum relaxation scattering mechanism in bulk GaAs and quantum wells by time resolved luminescence measurements.;The determinations of these two relaxation mechanisms were made from the comparisons between measurements and theoretical calculations of several parameters including temperature, carrier density, and carrier energy. In these calculations, special attention was paid to the density of states because of the dimensionality change when dimensionality changes. It turned out that all results from measurements involving different parameters lead to the same conclusions for the spin relaxation mechanism and momentum relaxation mechanism.;The effective spin relaxation mechanism was observed to be independent of the dimensionality but it is temperature dependent. At high temperatures (T {dollar}>{dollar} 80K), the D'yakonov-Perel' mechanism is effective while at low temperatures (T {dollar}<{dollar} 80K), the Bir-Aronov-Pikus mechanism is effective. The operating momentum relaxation scattering was determined to be the acoustic phonon scattering.
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Type
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dissertation
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Source
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PQT Legacy CUNY.xlsx
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degree
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Ph.D.
