Spectral ellipsometry and reflection difference anisotropy studies of semiconductors: Optical property measurement and modeling.

Title: Spectral ellipsometry and reflection difference anisotropy studies of semiconductors: Optical property measurement and modeling.
Identifier: AAI9946176
identifier: 9946176
Creator: Holden, Todd Marshall.
Contributor: Adviser: Fred H. Pollak
Date: 1999
Language: English
Publisher: City University of New York.
Subject: Physics, Condensed Matter | Physics, Optics
Abstract: To model spectral ellipsometry (SE) data, we introduced a new model of the dielectric function for diamond and zincblende-type. semiconductors. Our model is the first to include discrete and band-to-band Coulomb enhanced (BBCE) effects, i.e., continuum exciton at the fundamental bandgap, the spin orbit split gap, and the higher lying E1, E 1+Delta1 doublet. Our analysis has yielded experimental evaluation of the 2D exciton binding energies at the E1, E1+Delta1 CP's, R1. We show that the features near the E1, E1+Delta1 CP's are actually due to the bound exciton, which can be several hundred meV below the these CP's. The extracted R1 values using our model are in good agreement with effective-mass k•p theory.
Type: dissertation
Source: PQT Legacy CUNY.xlsx
degree: Ph.D.

Media: Spectral ellipsometry and reflection difference anisotropy studies of semiconductors: Optical property measurement and modeling.