Persistent spectral hole burning in organic and inorganic materials.
Item
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Title
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Persistent spectral hole burning in organic and inorganic materials.
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Identifier
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AAI9946226
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identifier
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9946226
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Creator
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Turukhin, Alexey Vladimir.
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Contributor
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Advisers: Robert R. Alfano | Anshel A. Gorokhovsky
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Date
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1999
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Language
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English
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Publisher
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City University of New York.
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Subject
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Physics, Condensed Matter | Physics, Optics
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Abstract
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Persistent spectral hole burning (PSHB) was experimentally and theoretically investigated in several organic and inorganic materials.;A practical approach for the determination of the quantum efficiency PSHB was suggested. The quantum efficiency was found from the experimental kinetics of hole formation. The method takes into account all primary mechanisms of dispersion for the hole burning kinetics and can be applied to the characterization and the comparison of materials with different mechanisms of hole burning. The quantum efficiency of PSHB has been found for free-base and metallo naphthalocyanines, which have photochemical and photophysical mechanisms of PSHB, respectively.;For the first time, PSHB in Si impurity center in CVD diamond film with zero-phonon line (ZPL) at 737 nm was demonstrated in temperature range 1.4--21 K. Photoluminescence, fluorescence line narrowing, and spectral hole burning of the Si center were studied. Di-atomic quasi-molecular Si2 structure of the defect has been confirmed. The temperature broadening of homogeneous ZPL involves local vibration with energy 19 cm-1. High thermostability (up to 120 K) of spectral holes and high multiplicity ratio in CVD diamond show a good potential of this material for high temperature high density hole burning.;For the first time, persistent spectral hole burning in beta-diketone tris chelates of thulium blended in a poly(methyl methacrylate) (PMMA) was observed and studied. Hole burning mechanism based on TLS model for amorphous media was proposed. Quantum efficiency of hole burning was obtained and compared for all samples. Gaussian shape of distribution for TLS parameters was established by the dispersive kinetics of hole burning. Distribution parameters for excited and ground states were obtained and compared for all samples. Temperature dependence of quantum efficiency of hole burning and results of temperature cycling experiments were explained by introduction of reversal thermally assisted tunneling processes in the excited and ground state respectively. Primary parameters of these tunneling processes were obtained.
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Type
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dissertation
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Source
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PQT Legacy CUNY.xlsx
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degree
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Ph.D.
