Properties of a two-dimensional low-density electron system near the B = 0 metal-insulator transition.
Item
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Title
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Properties of a two-dimensional low-density electron system near the B = 0 metal-insulator transition.
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Identifier
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AAI9908363
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identifier
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9908363
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Creator
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Simonian, Dmitri.
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Contributor
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Adviser: Myriam P. Sarachik
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Date
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1998
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Language
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English
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Publisher
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City University of New York.
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Subject
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Physics, Condensed Matter
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Abstract
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I present the results of an experimental investigation of a recently discovered conducting state and metal-insulator transition (MIT) in the absence of a magnetic field, in a dilute two-dimensional (2D) electron system in high-mobility metal-oxide-semiconductor field-effect transistors (MOSFETs).;Transport measurements below 1 Kelvin reveal new properties of a 2D system exhibiting this transition: scaling behavior of the resistivity with electric field, current-voltage symmetry across the metal-insulator transition, and complete suppression of the conducting state by application of a magnetic field on the order of 1 Tesla. I show that this suppression does not depend on the angle between the magnetic field and the plane of 2D electrons. In the presence of a large "quenching" parallel field, the system exhibits familiar B{dollar}\perp{dollar} = 0 insulator--quantum Hall conductor--insulator transitions in a perpendicular field, the behavior similar to that observed by different groups in strongly disordered 2D systems. The tilt-independent nature of the suppression suggests that the electrons' spin is central to the existence of the anomalous {dollar}B=0{dollar} conducting state.
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Type
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dissertation
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Source
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PQT Legacy CUNY.xlsx
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degree
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Ph.D.
