Resonant tunneling through a diode accumulation layer.
Item
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Title
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Resonant tunneling through a diode accumulation layer.
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Identifier
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AAI9946202
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identifier
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9946202
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Creator
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Morris, Daniel Peter.
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Contributor
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Adviser: Melvin Lax
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Date
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1999
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Language
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English
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Publisher
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City University of New York.
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Subject
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Physics, Condensed Matter | Engineering, Electronics and Electrical
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Abstract
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The phenomenon equivalent to resonant tunneling, in a double-barrier diode with a spacer layer and consequent accumulation layer on the cathode (source) side, is elucidated. The accumulation layer and the inter-barrier well is a double barrier reflecting structure in which each support an electron quasi-level (or several) which may be expected to combine coherently into a doublet of states that are filled by in-scattering of the source electrons and emptied by tunneling to the "anode" side. A rectangular model potential is computationally investigated to elucidate the properties of the double barrier reflecting structure, including the Gamow-like tunneling out of the double-well system. These properties are shown to be accurately represented by a two level model. The resulting current depends on the distribution of electron density (norm) between these two component orbitals, with a peak (as a function of bias) at the "level crossing" point where the norms are each 1/2. The in-scattering rate due to acoustic-mode phonons in particular is calculated. Corresponding diode current characteristics are obtained.
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Type
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dissertation
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Source
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PQT Legacy CUNY.xlsx
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degree
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Ph.D.
